Title:Material Challenges for InGaN-based Green-Light Emitting Devices
Speaker:Prof. Fernando A. Ponce, Department of Physics, Arizona State University, Tempe, AZ, USA
Time:May.31.2009,15:00-16:30PM
Venue:Room A101 at WNLO
Abstract：
The last two decades have seen significant advances in the development of visible light emitting devices and diode lasers. Red and blue lasers are now available commercially. But green light, with the highest response for the human eye, remains the most difficult to achieve efficiently using semiconductor materials. This is due to the physical nature of the InGaN alloys used for this purpose. There are three important aspects of InGaN alloys which need to be understood and controlled: (a) relaxation of lattice misfit, (b) thermodynamic instability, (c) polarization effects. This talk will review recent advances in understanding the complexity of the physics of these materials and will discuss the perspectives for achieving high efficiency green light emitting devices.
Biography：
Fernando A. Ponce is a Professor of Physics at Arizona State University. His research focuses on the physics of semiconductor materials, in particular for light emitting and sensing applications. He received his BS degree in Physics from the National University of Engineering (UNI) in Lima, Peru, and PhD degree in Materials Science and Engineering from Stanford University. He worked at Hewlett-Packard Laboratories in Palo Alto, California (1980-1984), and at the Xerox Palo Alto Research Center (1977-1980, 1984-1998). He has contributed to growth and characterization of photovoltaic materials, development and characterization of materials for optoelectronic applications, and high-resolution transmission electron microscopy. He has co-authored over 200 papers with 5,500 citations and eight patents; and has co-edited nine books He was and will be Chair or Co-Chair of 23 international conference meetings, including Meeting Chair of the 1999 Fall MRS Meeting, and Chair of the 27th International Conference on the Physics of Semiconductors in 2004, Chair of the 7th International Symposium on Blue Lasers and Light Emitting Devices (ISBLLED-7) held in March 2008, Chair of the Symposium on Group III Nitride Semiconductors, Co-Chair of the European Materials Research Society Spring Meeting (E-MRS 2009), in June 2009, Strasbourg, France, and Co-Chair of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2009), in 24-28 May 2009, Zhang Jia Jie, Hunan, China. He is also the committee member of 49 international conference meetings. He has been involved in promoting science in Latin America, where he has participated in the organization of several international meetings. His current interest is in the understanding of the materials properties of III-V nitrides, and their correlation to growth and to device performance for solid state lighting. He is a fellow of the American Physical Society. Since 1999, he has been at the Department of Physics, Arizona State University.
