• 中文
  • ABOUT WNLO
    • Overview
    • History
    • Organization
    • Contact WNLO
  • RESEARCH
    • Research Areas
    • Research Advances
  • FACULTY
  • INTERNATIONAL
    • Overview
    • Forums
    • Conferences
    • Journals
    • International Partners
  • OUTREACH
    • Educational Programs
    • Public Events
    • Tour
  • ABOUT WNLO
    • back
    • Overview
    • History
    • Organization
    • Contact WNLO
  • RESEARCH
    • back
    • Research Areas
    • Research Advances
  • FACULTY
    • back
    • Biomedical Photonics
    • Integrated Photonics
    • Optoelectronics Information Storage
    • Laser Science and Technology
    • Photonics for Energy
    • Life Molecular Network and Spectroscopy
    • Multimodal Molecular Imaging
    • Photon Radiation and Detection
  • INTERNATIONAL
    • back
    • Overview
    • Forums
    • Conferences
    • Journals
    • International Partners
  • OUTREACH
    • back
    • Educational Programs
    • Public Events
    • Tour

News

HOME >> INTERNATIONAL

INTERNATIONAL

  • Overview
  • Forums
  • Conferences
  • Journals
  • International Partners

Wuhan Optoelectronics Forum 42:Spin transfer moment: spintronics at the nanoscale

Time:Jan 3, 2019

Title:Spin transfer moment: spintronics at the nanoscale

Speaker:Pro.Jiangang Zhu

Time:Dec.16.2010,15:00PM

Venue: Room A101 At WNLO



Abstract:

      When an electric current passes through a ferromagnetic layer, it not only carries charge, but also spin angular momentum. Such spin current can then interact with local magnetization, an effect referred to as spin transfer torque (STT). Theoretically predicted by Professor Berger of Carnegie Mellon University and Dr. Slonczewiki of IBM, the effect was experimentally demonstrated for the first time in 1999. Since then, there have been substantial amount of research effort in exploring the physical effect along with its material dependence and potential technological applications. In this talk, we will review the underlying physics of the STT effect and discuss some of its important and enabling applications to date. In specific, the talk will present detailed discussion on STT driven magnetoresistive random access memory (MRAM) technology, STT induced microwave oscillators, and novel spin logic devices. At the end, potential for achieving non-charge pure spin current will be mentioned.







Prev:Wuhan Optoelectronics Forum 43:Progress in the research of organic electroluminescent diodes

Next:Wuhan Optoelectronics Forum 41:Characteristics and applications of advanced light source and novel photocathode

Grand Vision. Solid Research. Towards Excellency.

WUHAN NATIONAL LABORATORY FOR OPTOELECTRONICS No. 1037 Luoyu Road, Hongshan District, Wuhan, Hubei, China

  • RELATED SITES
  • Ministry of Science and Technology of the People’s Republic of China
  • Ministry of Education of the People’s Republic of China
  • Huazhong University of Science and Technology